FGH80N60FD datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
* High Input Impedance
* Fast Switching
* This Device is Pb−Free and .

Application

where low conduction and switching losses are essential. Features
* High Current Capability
* Low Saturation Vol.

Description

Using Novel Field Stop IGBT Technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features
* High Current Ca.

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